JPH03353B2 - - Google Patents
Info
- Publication number
- JPH03353B2 JPH03353B2 JP58237698A JP23769883A JPH03353B2 JP H03353 B2 JPH03353 B2 JP H03353B2 JP 58237698 A JP58237698 A JP 58237698A JP 23769883 A JP23769883 A JP 23769883A JP H03353 B2 JPH03353 B2 JP H03353B2
- Authority
- JP
- Japan
- Prior art keywords
- whiskers
- silicon carbide
- carbon monoxide
- present
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58237698A JPS60131899A (ja) | 1983-12-16 | 1983-12-16 | 炭化ケイ素ウイスカ−の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58237698A JPS60131899A (ja) | 1983-12-16 | 1983-12-16 | 炭化ケイ素ウイスカ−の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60131899A JPS60131899A (ja) | 1985-07-13 |
JPH03353B2 true JPH03353B2 (en]) | 1991-01-07 |
Family
ID=17019180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58237698A Granted JPS60131899A (ja) | 1983-12-16 | 1983-12-16 | 炭化ケイ素ウイスカ−の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60131899A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6236100A (ja) * | 1985-08-09 | 1987-02-17 | Ube Ind Ltd | 炭化珪素ウイスカ−の製造法 |
CN108002839B (zh) * | 2017-12-08 | 2021-04-16 | 东华大学 | 一种ZrC1-x-SiC复相陶瓷的制备方法 |
-
1983
- 1983-12-16 JP JP58237698A patent/JPS60131899A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60131899A (ja) | 1985-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH03357B2 (en]) | ||
US4619905A (en) | Process for the synthesis of silicon nitride | |
JPS5913442B2 (ja) | 高純度の型窒化珪素の製造法 | |
US4521393A (en) | Method of manufacturing β type silicon nitride whiskers | |
US3394991A (en) | Manufacture of silicon nitride | |
JPH0353279B2 (en]) | ||
SE449221B (sv) | Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc | |
JPS6111886B2 (en]) | ||
JPH03353B2 (en]) | ||
US4975392A (en) | Method for manufacturing silicon carbide whisker | |
JP2604753B2 (ja) | 炭化ケイ素ウイスカーの製造方法 | |
JPS5930645B2 (ja) | 高純度α型窒化珪素の製造法 | |
JPS5945637B2 (ja) | 炭化珪素ウイスカ−の製造方法 | |
JP3746109B2 (ja) | 四塩化珪素の製造方法 | |
JP2579949B2 (ja) | 炭化ケイ素ウイスカ−の製造方法 | |
JPS6111885B2 (en]) | ||
JPS6126600A (ja) | β型炭化ケイ素ウイスカ−の製造方法 | |
JPS62143805A (ja) | 窒化珪素粉末から塩素および/またはフツ素を除去する方法 | |
JPH10203818A (ja) | 低酸素ケイ素造粒物及びその製造方法並びに窒化ケイ素の製造方法 | |
JPS62260798A (ja) | 炭化ケイ素ウイスカ−の製造方法 | |
JPH0274598A (ja) | 窒化珪素ウイスカーの製造方法 | |
JPS6259049B2 (en]) | ||
JPS6251888B2 (en]) | ||
JPS6313931B2 (en]) | ||
JPH0693517A (ja) | 異形繊維状SiCとその製造方法 |